Self-interstitials and the 935 cm−1 band in silicon

28 August 1989

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 55 (9) , 870-872
https://doi.org/10.1063/1.101625

Abstract

Substitutional carbon in Czochralski Si is found to decrease the formation rate for a 935 cm⁻¹ infrared absorption band under neutron irradiation while that for a 965 cm⁻¹ band (interstitial carbon trapped at interstitial oxygen) increases. The observations support a controversial previous assignment of the 935 cm⁻¹ band to a center with interstitial Si trapped by interstitial oxygen.

Keywords

This publication has 4 references indexed in Scilit:

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1.8-, 3.3-, and 3.9-μ Bands in Irradiated Silicon: Correlations with the Divacancy
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