Precise computer control of the MBE process — application to graded InGaAlAs/InP alloys
- 2 May 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 111 (1-4) , 56-60
- https://doi.org/10.1016/0022-0248(91)90946-3
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Elimination of the flux transients from molecular-beam epitaxy source cells following shutter operationJournal of Vacuum Science & Technology B, 1988
- X-ray double-crystal characterization of highly perfect InGaAs/InP grown by vapor-phase epitaxyJournal of Applied Physics, 1986