Influence of growth conditions on deep levels in molecular-beam-epitaxial GaAs

16 February 1984

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 20 (4) , 174-175
https://doi.org/10.1049/el:19840116

Abstract

Molecular-bearn-epitaxially grown undoped GaAs layers are studied with regard to the relation between growth conditions and deep-level trap generation. Both carrier concentration and electron trap density have a minimum value in samples grown at close to the minimum As/Ga flux ratio under As-stabilised conditions. Growth under these conditions leads to suppression of defect generation and unintentional impurity incorporation.

Keywords

CARRIER CONCENTRATION
GROWTH CONDITIONS
FLUX RATIO
ELECTRON TRAP DENSITY
III-V SEMICONDUCTORS
UNDOPED GAAS LAYERS
DEEP-LEVEL TRAP GENERATION
MBE
DEFECT GENERATION

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