Properties of a Semiconductor Surface as Determined from a Modified Drift Mobility Experiment
- 1 March 1959
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 2 (5) , 199-200
- https://doi.org/10.1103/physrevlett.2.199
Abstract
DOI: https://doi.org/10.1103/PhysRevLett.2.199Keywords
This publication has 4 references indexed in Scilit:
- Characteristics of Junctions in GermaniumJournal of Applied Physics, 1958
- Field Effect in Germanium at High FrequenciesPhysical Review B, 1957
- Calculation of the Space Charge, Electric Field, and Free Carrier Concentration at the Surface of a SemiconductorJournal of Applied Physics, 1955
- Drift Mobilities in Semiconductors. I. GermaniumPhysical Review B, 1953