Growth of undulating Si0.5Ge0.5 layers for photodetectors at λ=1.55 μm
- 1 August 1999
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 86 (3) , 1287-1291
- https://doi.org/10.1063/1.370883
Abstract
Si 0.5 Ge 0.5 /Si multiquantum-well structures are grown using a production-compatible ultrahigh vacuum chemical vapor deposition system. The structures are designed in order to obtain dislocation-free undulating strained layers used as the absorbing layers in photodetector structures. The Si/SiGe/Si stack on a silicon-on-insulator wafer is used as the waveguiding layer. Transmission electron microscopy and photoluminescence are used to characterize the undulating layers. A photoluminescence emission corresponding to the band edge “no phonon” transition is measured at a wavelength beyond 1.55 μm. Preliminary data from metal–semiconductor–metal photodetectors fabricated with this material show a responsivity of approximately 0.1 A/W at the telecommunication wavelength of λ=1.55 μm.This publication has 33 references indexed in Scilit:
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