Structural Characterization of Thin, Low Temperature Films of GaAs on Si Substrates
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Nucleation and initial growth of GaAs on Si substrateApplied Physics Letters, 1986
- Symmetric arsenic dimers on the Si(100) surfacePhysical Review Letters, 1986
- The Growth of GaAs on Si by Molecular Beam EpitaxyMRS Proceedings, 1986
- MBE Growth of GaAs on Si: Problems and ProgressMRS Proceedings, 1986