Polar-optical phonon-limited transport in degenerate GaN-based quantum wells
- 5 June 2001
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 63 (24) , 245313
- https://doi.org/10.1103/physrevb.63.245313
Abstract
A theory of polar-optical phonon-limited electron transport in GaN-based quantum wells is developed within the Boltzmann equation approach. The linearized Boltzmann equation is solved for a degenerate two-dimensional electron system using a ladder technique, enabling evaluations of the effective momentum relaxation time and the low-field electron mobility to be carried out. Variations of the effective momentum relaxation time with the well width, electron energy, lattice temperature, and electron density are explored in these heterostructures. The corresponding mobility is then evaluated and its variations with the well width, lattice temperature, and electron density displayed. Comparison is made, where appropriate, with the results emerging from the application of a low-energy approximation.Keywords
This publication has 24 references indexed in Scilit:
- Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructuresJournal of Applied Physics, 1999
- Electron mobility in modulation-doped AlGaN–GaN heterostructuresApplied Physics Letters, 1999
- Piezoelectric doping and elastic strain relaxation in AlGaN–GaN heterostructure field effect transistorsApplied Physics Letters, 1998
- Mobility of two-dimensional electrons in AlGaN/GaN modulation-doped field-effect transistorsApplied Physics Letters, 1998
- Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substratesApplied Physics Letters, 1998
- Spontaneous polarization and piezoelectric constants of III-V nitridesPhysical Review B, 1997
- The Blue Laser DiodePublished by Springer Nature ,1997
- Strain-induced two-dimensional electron gas in [111] growth-axis strained-layer structuresApplied Physics Letters, 1990
- Theory of semiconductor superlattice electronic structureReviews of Modern Physics, 1990
- Strain-generated electric fields in [111] growth axis strained-layer superlatticesSolid State Communications, 1986