Simulation of large-scale silicon melt flow in magnetic Czochralski growth
- 1 August 2002
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 243 (2) , 243-260
- https://doi.org/10.1016/s0022-0248(02)01441-0
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Numerical investigation of silicon melt flow in large diameter CZ-crystal growth under the influence of steady and dynamic magnetic fieldsJournal of Crystal Growth, 2001
- Comparison of the predictions from 3D numerical simulation with temperature distributions measured in Si Czochralski melts under the influence of different magnetic fieldsJournal of Crystal Growth, 2001
- Three-dimensional simulation of flow and thermal field in a Czochralski melt using a block-structured finite-volume methodJournal of Crystal Growth, 2000
- Numerical study of three-dimensional mixed convection due to buoyancy and centrifugal force in an oxide melt for Czochralski growthJournal of Crystal Growth, 2000
- TRANSIENT THREE-DIMENSIONAL FLOW CHARACTERISTICS OF Si MELT IN A CZOCHRALSKI CONFIGURATION UNDER A CUSP-SHAPED MAGNETIC FIELDNumerical Heat Transfer, Part A: Applications, 1999
- Flow and temperature field in molten silicon during Czochralski crystal growth in a cusp magnetic fieldJournal of Crystal Growth, 1998
- Melt‐Motion during the Czochralski Growth of Silicon Crystals with a Cusp Magnetic FieldJournal of the Electrochemical Society, 1997
- Double-beam x-ray radiography system for three-dimensional flow visualization of molten silicon convectionJournal of Crystal Growth, 1993
- A finite element method for analysis of fluid flow, heat transfer and free interfaces in Czochralski crystal growthInternational Journal for Numerical Methods in Fluids, 1989
- Theory of transport processes in single crystal growth from the meltAIChE Journal, 1988