Temperature dependence of theenergy gap in gallium antimonide
- 15 January 1981
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 23 (2) , 928-930
- https://doi.org/10.1103/physrevb.23.928
Abstract
Electroreflectance spectra are reported for GaSb near the direct transition and the indirect transition. At 30 K the gap is 0.063 eV. The temperature variation of the gap in the linear region is of the order of -1.8×eV/.
This publication has 32 references indexed in Scilit:
- Band nonparabolicities, broadening, and internal field distributions: The spectroscopy of Franz-Keldysh oscillationsPhysical Review B, 1974
- Temperature dependence of the band structure of germanium- and zinc-blende-type semiconductorsPhysical Review B, 1974
- Interband Masses of Higher Interband Critical Points in GePhysical Review Letters, 1973
- Schottky-Barrier Electroreflectance: Application to GaAsPhysical Review B, 1973
- Determination of the energy separation ΔEc of the two minima of the conduction band of GaSb and its variation with temperaturePhysica Status Solidi (a), 1970
- Energy-Band Structure and Optical Properties of GaSbPhysical Review B, 1969
- Conduction-Band Structure of GaSb from Pressure Experiments to 50 kbarPhysical Review B, 1968
- Low-Temperature Transport Effects in-Type GaSb at High Magnetic FieldsPhysical Review B, 1967
- Electric Field Effects on the Dielectric Constant of SolidsPhysical Review B, 1967
- Electric-Field Effects on Optical Absorption near Thresholds in SolidsPhysical Review B, 1966