Field emitter tips for vacuum microelectronic devices

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Abstract
The design criteria for two forms of field emitters (cone and wedge) for vacuum microelectronic applications are discussed. Effects of practical variations in geometry on emission current, spatial and temporal dispersion of electron emission, and emitter heating are calculated by simulation. Several design guidelines for the geometry of the emitter–anode complex are suggested. A sharp silicon tip processing method is presented, which is based on the oxidation inhibition of silicon at regions of high curvature. Methods for forming emitters of other materials are also discussed.

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