Aluminum Diffusion into Silicon in an Open Tube High Vacuum System
- 1 June 1978
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 125 (6) , 957-962
- https://doi.org/10.1149/1.2131598
Abstract
A high vacuum, open tube method for aluminum diffusion into silicon has been described. This technique is simpler and more cost effective than the widely used sealed ampul diffusion. The process offers the possibility of aluminum doping with surface concentration from 1017–1019 cm−3 and is suitable for high volume production. A simplified mass transport and diffusion model has been developed and used to evaluate the diffusion results. Aluminum diffusion coefficient into silicon has been determined to be: in the temperature range of 1025°–1175°C.Keywords
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