Summary Abstract: Internal photoemission studies of (GaIn)As, (AlIn)As Schottky diodes and (GaIn)As/(AlIn)As heterojunction grown by molecular beam epitaxy
- 1 March 1985
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 3 (2) , 700-702
- https://doi.org/10.1116/1.583222
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