Peripheral emitter—Base junction capacitance in bipolar transistors
- 1 May 1979
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 26 (5) , 810-811
- https://doi.org/10.1109/T-ED.1979.19499
Abstract
The emitter-base peripheral (sidewall) capacitance of double-diffused silicon bipolar transistors is computed at zero bias. Results are presented in such a way as to provide useful design data.Keywords
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