The depth profile of high-dose low-mass ions implanted into higher mass substrate by RBS analysis
- 31 December 1981
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research
- Vol. 191 (1-3) , 147-150
- https://doi.org/10.1016/0029-554x(81)90997-6
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- The determination of high-dose implantation profiles using low-angle Rutherford backscatteringNuclear Instruments and Methods, 1978