High photoconductivity in magnetron sputtered amorphous hydrogenated germanium films
- 1 November 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (9) , 871-873
- https://doi.org/10.1063/1.94532
Abstract
Undoped amorphous hydrogenated germanium films which exhibit photoconductivities greater than 10−6 (Ω cm)−1 at a 1.96-eV photon flux of 1015 photons/(cm2 s) with corresponding mobility lifetime products of 10−6 cm2/V have been grown by magnetron sputtering. The films were also characterized by measuring the infrared absorption, the optical obsorption, and the dark conductivity as a function of temperature.Keywords
This publication has 6 references indexed in Scilit:
- Properties of amorphous hydrogenated silicon, with special emphasis on preparation by sputteringSolar Energy Materials, 1981
- Structural interpretation of the vibrational spectra of-Si: H alloysPhysical Review B, 1979
- Electronic transport and photoconductivity in phosphorus-doped amorphous germaniumPhilosophical Magazine Part B, 1979
- Transport and recombination in sputtered hydrogenated amorphous germaniumPhysical Review B, 1977
- Use of hydrogenation in the study of the transport properties of amorphous germaniumPhysical Review B, 1976
- Use of hydrogenation in structural and electronic studies of gap states in amorphous germaniumPhysical Review B, 1976