Maskless ion implantation technology for III–V compound semiconductors
- 1 March 1985
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 7-8, 851-857
- https://doi.org/10.1016/0168-583x(85)90482-3
Abstract
No abstract availableThis publication has 22 references indexed in Scilit:
- Electrical Properties of Focused-Ion-Beam Boron-Implanted SiliconJapanese Journal of Applied Physics, 1983
- Maskless etching of a nanometer structure by focused ion beamsJournal of Vacuum Science & Technology B, 1983
- Focused Si Ion Implantation in GaAsJapanese Journal of Applied Physics, 1983
- Maskless etching of GaAs and InP using a scanning microplasmaJournal of Vacuum Science & Technology B, 1983
- 100 keV focused ion beam system with a E×B mass filter for maskless ion implantationJournal of Vacuum Science & Technology B, 1983
- FET fabrication using maskless ion implantationJournal of Vacuum Science and Technology, 1981
- A 100-kV ion probe microfabrication system with a tetrode gunJournal of Vacuum Science and Technology, 1981
- Optical column design with liquid metal ion sourcesJournal of Vacuum Science and Technology, 1981
- High current density Ga+ implantations into SiApplied Physics Letters, 1979
- A high-intensity scanning ion probe with submicrometer spot sizeApplied Physics Letters, 1979