Low-Temperature Oxidation of Silicon by O2 Cluster Ion Beams
- 1 February 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (2S) , 1450-1453
- https://doi.org/10.1143/jjap.35.1450
Abstract
High-quality SiO2 films up to 11 nm thick were grown on Si substrate surfaces at room temperature by O2 cluster ion irradiation. No damage was observed after N2 annealing at 400°C for 30 min in the I-V characteristics of the thermally grown gate oxides irradiated with 5 keV Ar cluster ions. These results indicate that O2 cluster ions strongly enhanced the oxidation with low irradiation damage.Keywords
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