Large-area double-side pulsed laser deposition of YBa2Cu3O7−x thin films on 3-in. sapphire wafers
- 3 June 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 68 (23) , 3332-3334
- https://doi.org/10.1063/1.116048
Abstract
A pulsed laser deposition (PLD) technique for YBa2Cu3O7−x (YBCO) thin films with CeO2 buffer layers and gold contact films on both sides of 3‐in. diameter sapphire wafers, which are applied for microwave strip‐line filters, is described and some results of structural and compositional characterization are given. This large‐area multilayer PLD technique allows for a homogeneous and reproducible YBCO deposition on both wafer sides with inductively measured critical current densities of 3×106–5×106 A/cm2 at 77 K with a YBCO thickness of 350–500 nm. The results indicate that PLD seems to have unique capabilities for fast deposition of high‐quality large area oxide multilayers.Keywords
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