Connections and disconnections on integrated circuits using nanosecond laser pulses
- 1 February 1975
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 26 (3) , 124-126
- https://doi.org/10.1063/1.88070
Abstract
Nanosecond pulses from a focused nitrogen pumped dye laser have been used to connect and disconnect conductors on FET chips. Experiments on connections between n+ diffusion layers and aluminum, separated by an insulating layer of SiO2, show promise for high yield and reliability. The connections have Ohmic characteristics. Sectioned laser connections were examined with an electron microprobe and microscope in order to examine physical details of the connection process.Keywords
This publication has 3 references indexed in Scilit:
- Effects of pulsed laser radiation on thin aluminum filmsJournal of Applied Physics, 1972
- High-intensity laser-induced vaporization and explosion of solid materialIEEE Journal of Quantum Electronics, 1972
- Organic lasers excited by a pulsed N2laserIEEE Journal of Quantum Electronics, 1969