Texture analysis of polycrystalline silicon films
- 1 January 1990
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 67 (1) , 572-574
- https://doi.org/10.1063/1.345196
Abstract
A method for the quantitative characterization of texture in thin films using x-ray diffraction is presented. The traditional technique, which makes use of a powder diffractometer, relies on peak intensity measurements at normal incidence. By using pole figure measurements and subsequent orientation distribution analysis we obtain the substantially improved coverage necessary to accurately characterize textures of thin silicon films which exhibit great variation and complexity.This publication has 4 references indexed in Scilit:
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- Diffusion of Impurities in Polycrystalline SiliconJournal of Applied Physics, 1972
- Determination of Preferred Orientation in Flat Transmission Samples Using a Geiger Counter X-Ray SpectrometerJournal of Applied Physics, 1949