Low frequency capacitance characterizations on indium/x-phase of metal free phthalocyanine solar cells

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Abstract
The low‐frequency oscillographic capacitance measurements have been employed to characterize indium/x‐phase of metal‐free phthalocyanine Schottky‐barrier solar cells. The capacitance‐voltage relationships (1/c2 vs V) measured at various frequencies in the dark and under simulated solar illumination can be described by an approximation of two intersecting lines. The slope of these lines showed strong dependence on both frequency and light intensity. The frequency, bias potential, and light intensity dependence of the capacitance of the cell was attributed to shallow traps and deep acceptor states which have a long relaxation time. The shallow trap and deep acceptor state densities were determined to be 6.3×1016 and 2×1016 cm−3, respectively.