Infrared Spectra of Amorphous Silicon-Fluorine Alloys Prepared by Sputtering in Fluorosilane-Argon Gas Mixture
- 1 May 1980
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 19 (5) , L265-268
- https://doi.org/10.1143/jjap.19.l265
Abstract
Infrared spectra of amorphous Si : F alloys prepared by sputtering of a silicon crystal in SiF4 or a mixture of SiF4+Ar were measured in the frequency range of 450–4000 cm-1. Six absorption bands were observed in the 800–1100 cm-1 region. These bands are assigned as the SiF N (N=1, 2, 3) bond stretching vibration modes by comparison with the infrared spectra of SiF N H4-N molecules. In addition, fluorine modified or enhanced Si-Si bond stretching modes were observed at 515 and 650 cm-1.Keywords
This publication has 9 references indexed in Scilit:
- A Comparison of the Thermal Stabilities of Fluorinated and Hydrogenated Amorphous-SiliconsJapanese Journal of Applied Physics, 1980
- Electrical and optical properties of amorphous Si:F:H alloysPhilosophical Magazine Part B, 1979
- A new amorphous silicon-based alloy for electronic applicationsNature, 1978
- Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputteringPhysical Review B, 1977
- Silicon-Fluorine Chemistry. I. Silicon Difluoride and the Perfluorosilanes1Journal of the American Chemical Society, 1965
- Infra-red spectrum of difluorosilaneTransactions of the Faraday Society, 1964
- Infrared spectra of SiF3H, SiF3D, SiD3F and SiD3ClSpectrochimica Acta, 1959
- Infrared Spectra and Molecular Structures of SiH3F, SiH3Cl, and SiH3BrThe Journal of Chemical Physics, 1956
- The Infrared and Raman Spectra of SiF4The Journal of Chemical Physics, 1951