Electrical Characteristics of Lithium‐Doped ZnO Films

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Abstract
Consistent attempts are being made to improve the resistivity of zinc oxide films for operating monolithic surface acoustic wave devices at low operational frequencies. This paper highlights a technique for diffusing lithium which is more viable, cleaner, and more compatible with silicon processing. Lithium is doped by bubbling oxygen through saturated solution at different temperatures. Infrared and Auger electron spectroscopy reveal Li‐O peaks. films with C‐axis were deposited on grown on single crystal silicon by RF magnetron sputtering. Resistivities of doped films at room temperature are one to two orders of magnitude higher than undoped films. These results are interpreted as a reduction in the donor states in , as Zn with its electron is ejected out. interface charges which are induced due to radiation effects during sputtering are annealed out during lithium doping, followed by an oxygen anneal.

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