Monolithic AlGaAs-GaAs HBT single- and dual-stage ultra-broadband amplifiers
- 1 May 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters
- Vol. 1 (5) , 107-109
- https://doi.org/10.1109/75.89078
Abstract
The circuit design and performance of single- and dual-stage ultra-wideband monolithic microwave integrated circuit (MMIC) amplifiers using AlGaAs-GaAs heterojunction bipolar transistors (HBTs) are presented. The single-stage feedback amplifier has 10 dB of gain and a 3-dB bandwidth of DC to 18 GHz. The two-stage AC-coupled version achieves over 20 dB of gain and has a 3-dB bandwidth of 0.1 to 18 GHz. These amplifiers are extremely small in size (single-stage: 24 mils*24 mils, two-stage: 24 mils*40 mils) since there are no reactive matching elements. This results in high chip yield and low cost.Keywords
This publication has 1 reference indexed in Scilit:
- GaAs heterojunction bipolar transistor MMIC DC to 10 GHz direct-coupled feedback amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003