Photoluminescence and Raman scattering from GaN layers grown on GaAs and GaP substrates
- 1 August 1995
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 10 (8) , 1117-1121
- https://doi.org/10.1088/0268-1242/10/8/011
Abstract
We report comprehensive photoluminescence, Raman scattering and photoluminescence excitation data on GaN layers grown by MBE on GaAs and GaP substrates. The main photoluminescence feature of GaN layers corresponds to the recombination of free carriers from conduction and valence bands. It is supported by both photoluminescence and photoluminescence excitation spectroscopic data. The origin of impurity-assisted photoluminescence is discussed. We also report the Raman spectra on cubic GaN films.Keywords
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