Laser annealing of m.o.s.-transistor channel implantations
- 15 March 1979
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 15 (6) , 184-186
- https://doi.org/10.1049/el:19790129
Abstract
Laser annealing of the implanted gate region of n-channel m.o.s. transistors is described. The threshold shift against dose is measured for laser-annealed and thermally annealed samples. Comparison with theoretical threshold shift shows that laser annealing yields full electrical activation without diffusive redistribution, in contrast to thermal annealing at 960°C.Keywords
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