Quantitative model for epitaxial-transistor collector characteristics
- 23 July 1970
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 6 (15) , 485-487
- https://doi.org/10.1049/el:19700339
Abstract
A 1-dimensional transistor model is presented which characterises the variation of collector resistance with two parameters. The mode assumes that lifetime varies inversely with injection level. Calculated collector characteristics and hFE against collector-current curves are compared with experimental results.Keywords
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