Effect of Intermediate Thermal Processing on Microstructural Changes of Oxygen Implanted Silicon-on-Insulator Material
- 1 January 1991
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Effect of dose and annealing conditions on the structure of silicon-on-insulator material implanted with oxygen at high temperature and at high current densityVacuum, 1991
- Reduced defect density in silicon-on-insulator structures formed by oxygen implantation in two stepsApplied Physics Letters, 1989
- Precipitate and Defect Formation in Oxygen Implanted Silicon-on-Insulator MaterialMRS Proceedings, 1987