Two-dimensional hole gas induced by piezoelectric and pyroelectric charges
- 27 January 2000
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 44 (2) , 205-210
- https://doi.org/10.1016/s0038-1101(99)00225-7
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- GaN-Based Pyroelectronics and PiezoelectronicsPublished by Elsevier ,2000
- Piezoelectric doping and elastic strain relaxation in AlGaN–GaN heterostructure field effect transistorsApplied Physics Letters, 1998
- Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistorsApplied Physics Letters, 1997
- Spontaneous polarization and piezoelectric constants of III-V nitridesPhysical Review B, 1997
- Elastic strain relaxation and piezoeffect in GaN-AlN, GaN-AlGaN and GaN-InGaN superlatticesJournal of Applied Physics, 1997
- GaN/AIGaN Heterostructure Devices: Photodetectors and Field-Effect TransistorsMRS Bulletin, 1997
- Valence-band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x-ray photoemission spectroscopyApplied Physics Letters, 1996
- The influence of the strain-induced electric field on the charge distribution in GaN-AlN-GaN structureJournal of Applied Physics, 1993
- Vibrational Spectroscopy of Aluminum NitrideJournal of the American Ceramic Society, 1993
- Study of the elastic properties of gallium nitridePhysica Status Solidi (a), 1978