Computer simulation of Si and Ge adatoms and thin layers on Si substrates
- 1 October 1989
- journal article
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 1 (SB) , SB17-SB20
- https://doi.org/10.1088/0953-8984/1/sb/004
Abstract
The molecular dynamics method is used to determine minimum energy configurations of Si and Ge adatoms on a Si surface. Results for thin layers of Ge on Si substrates and Si-Ge superlattices are also presented.Keywords
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