Epitaxial Growth of Silicon by Hydrogen Reduction of SiHCl[sub 3] onto Silicon Substrates

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Abstract
Epitaxial films of silicon have been grown on silicon substrates by hydrogen reduction of . Reaction kinetics have been investigated and an over‐all reaction mechanism suggested, assuming reduction to occur on the substrate surface. Electron micrographs and diffractograms of growing layers have been obtained in an attempt to determine the nature of the growth process. Preliminary results indicate that this occurs initially by the formation of individual nuclei rather than by continuous film formation, but the nucleation process is apparently not propagated continuously.

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