Quantum efficiency stability of silicon photodiodes
- 15 December 1987
- journal article
- Published by Optica Publishing Group in Applied Optics
- Vol. 26 (24) , 5284-5290
- https://doi.org/10.1364/ao.26.005284
Abstract
Optics InfoBase is the Optical Society's online library for flagship journals, partnered and copublished journals, and recent proceedings from OSA conferences.Keywords
This publication has 23 references indexed in Scilit:
- Stable, high quantum efficiency, UV-enhanced silicon photodiodes by arsenic diffusionSolid-State Electronics, 1987
- Edge illumination of a silicon photodiode at ultraviolet wavelengthsApplied Optics, 1987
- Response time and linearity of inversion layer silicon photodiodesApplied Optics, 1985
- Oxide-bias Measurements in the Silicon Photodiode Self-calibration TechniqueMetrologia, 1985
- New calculations of the quantum yield of silicon in the near ultravioletPhysical Review B, 1983
- Photodiode quantum efficiency enhancement at 365 nm: optical and electricalApplied Optics, 1982
- Complete collection of minority carriers from the inversion layer in induced junction diodesJournal of Applied Physics, 1981
- The quantum yield of silicon in the visibleApplied Physics Letters, 1979
- Ultraviolet enhanced responsivity of silicon photodiodes: an investigationApplied Optics, 1977
- Silicon photodetector instabilities in the uvApplied Optics, 1976