Native Oxides Formed on Single‐Crystal Germanium by Wet Chemical Reactions

Publisher Website
Google Scholar
Abstract
The preparation of stable oxide films on single‐crystal germanium surfaces by a room temperature “wet” chemical oxidation technique is described. Characterization by IR‐transmission, ellipsometry, x‐ray photoelectron spectroscopy, Rutherford backscattering, and electron microscopy show that such films are dense, uniform, and free of defects. The oxides are a mixture of two germanium dioxide phases both of which have a cristobalite atomic configuration. Unlike hexagonal germania, these films are stable in both water and hydrofluoric acid. They can be totally converted to the hexagonal dioxide phase by heat‐treatment in either oxygen or nitrogen ambient at 600°C. The growth kinetics, mechanisms and morphologies of the oxides formed by this method are presented. Preliminary evaluation of the electronic character of the oxide/semiconductor interface is also included.

This publication has 0 references indexed in Scilit: