Electrical conduction in heavily doped germanium

Publisher Website
Google Scholar
Abstract
Samples of germanium in the doping range 1 × 1017 to 5 × 1017 cm−3 donors, with 25% compensation, have been investigated. The electrical receptivity-has been measured from 300 to below 0·2 K in most cases, and the Hall effect from 300 to 2·0 K. In all cases, activated conduction of some form is seen at low temperatures. This is interpreted in the more heavily doped samples as being initially due to activation to a mobility edge in the impurity band, going over to hopping (variable range) around the Fermi energy at very low temperatures as suggested by Mott. The behavior of the more lightly doped samples is consistent with the ideas of Mott and Davis on impurity conduction, each sample showing regions of different, constant activation energy even down to very low temperatures. The magnitude of the conductivities observed in the variable range hopping region is compared with the values suggested by theoretical considerations.

This publication has 7 references indexed in Scilit: