Doping Properties of Amphoteric C, Si, and Ge Impurities in GaN and AlN

• 1 October 1996
• journal article
• Published by Institute of Physics, Polish Academy of Sciences in Acta Physica Polonica A
• Vol. 90  (4) , 735-738
• https://doi.org/10.12693/aphyspola.90.735

Abstract

Keywords

• GAN
• DOPING PROPERTIES
• AMPHOTERIC
• GE IMPURITIES
• ALN