Buried recombination layers with enhanced n-type conductivity for silicon power devices

This publication has 5 references indexed in Scilit:

• Optimizing carrier lifetime profile for improved trade-off between turn-off time and forward drop
  IEEE Transactions on Electron Devices, 1983
• The Dominant Recombination Centers in Electron‐Irradiated Semiconductors Devices
  Journal of the Electrochemical Society, 1977
• The effect of gold concentration gradients on thyristor switching properties
  IEEE Transactions on Electron Devices, 1976
• EPR of conduction electrons produced in silicon by hydrogen ion implantation
  Physica Status Solidi (a), 1974
• Electrical properties of n-type Si layers doped with proton bombardment induced shallow donors
  Solid State Communications, 1972