12GHz-Band Low-Noise GaAs Monolithic Amplifiers
- 23 March 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 83 (1) , 85-89
- https://doi.org/10.1109/mcs.1983.1151049
Abstract
One- and two-stage 12GHz-band low-noise GaAs monolithic amplifiers have been developed for use in direct broadcasting satellite receivers. The one-stage amplifier provides a less than 2.5dB noise figure with more than 9.5dB associated gain in the 11.7 to 12.7GHz band. In the same frequency band, the two-stage amplifier has a less than 2.8dB noise figure with more than 16dB associated gain. A 0.5 µm gate closely-spaced electrode FET with an ion implanted active layer is employed in the amplifier in order to achieve a low noise figure without reducing reproducibility. Chip size is 1 mm x 0.9 mm for the one-stage amplifier and 1.5 mm x mm for the two-stage amplfiier.Keywords
This publication has 3 references indexed in Scilit:
- Monolithic Circuits for 12 GHz Direct Broadcasting Satellite ReceptionPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Ion-implanted E/D-type GaAs IC technologyElectronics Letters, 1981
- Super low-noise GaAs MESFET's with a deep-recess structureIEEE Transactions on Electron Devices, 1980