Mechanical Stress Induced MOSFET Punch-through And Process Optimization For Deep Submicron TEOS-O/sub 3/ Filled STI Device
- 1 January 1997
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- The impact of mechanical stress control on VLSI fabrication processPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Comparative evaluation of gap-fill dielectrics in shallow trench isolation for sub-0.25 μm technologiesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002