The Effects of Iodine-Doping on the Hetero-Epitaxial Growth of ZnS on GaP Substrates

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Abstract
Single-crystalline ZnS layers have been grown on GaP substrates using an open-tube hydrogen transport system. By the addition of iodine to the reactant agents, the growth rate of ZnS on GaP(111)A decreased and that on GaP(111)B increased. These changes of the growth rates caused by the iodine-doping process were characterized as the opposite behavior compared with those for the indium-doping case. For the growth on the GaP(100) plane, the deposition region has largely shifted to lower temperatures, and higher growth rates, such as 5 µm/h, were obtained at considerably lower temperatures, such as 580°C. From an x-ray diffraction analysis, it was found that a significant improvement in the crystallinity of the grown layers on (100) substrates was caused by the doping of iodine. An improvement in the surface morphology for these layers was also clearly observed.

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