Transport phenomena in amorphous silicon doped by ion implantation of 3d metals
- 16 June 1986
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 95 (2) , 635-640
- https://doi.org/10.1002/pssa.2210950233
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Electron spin resonance in amorphous Si and Ge doped with MnSolid State Communications, 1977