Effect of Subcutaneous Implantation of Anti-Siphon Devices on CSF Shunt Function
- 1 January 1990
- journal article
- Published by S. Karger AG in Pediatric Neurosurgery
- Vol. 16 (4-5) , 197-202
- https://doi.org/10.1159/000120526
Abstract
Anti-siphon devices (ASD) were initially bench tested at flow rates between 10 and 50 cm3/h and with the distal catheter height between 0 and –60 cm. There was a small increase in pressure with increased flow rate in the horizontal position (p 2O. Positive pressures caused a linear increase in inflow pressure; negative chamber pressure reduced the antisiphon effect. Eight ASDs were implanted subcutaneously in piglets and tested in situ weekly for 4 weeks. Implantation caused a mean increase in inflow pressure of 93.5 mm H2O 7 days after implantation (pKeywords
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