Ion beam sputtered spin-valve films with improved giant magnetoresistance response
- 15 April 1999
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 85 (8) , 4454-4456
- https://doi.org/10.1063/1.370372
Abstract
A large value of giant magnetoresistance ΔR/R=9% with an exchange field H ex =350 Oe has been measured from simple NiFe/CoFe/Cu/CoFe/IrMn top spin-valvefilms prepared by ion beam deposition(IBD) techniques. The exchange biasing was greatly enhanced when a synthetic pinned layer, CoFe/Ru/CoFe, is used in the spin-valve structures. Apparent exchange field values in excess of 2000 Oe and ΔR/R values above 8% have been obtained in synthetic spin-valvefilms. These IBDspin-valvefilms show excellent thermal stability and they are suitable for the applications in high density magnetic recording heads.This publication has 6 references indexed in Scilit:
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