Isolated As antisite in GaAs: Possibility of the EL2 defect
- 15 October 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 40 (11) , 8020-8023
- https://doi.org/10.1103/physrevb.40.8020
Abstract
A theoretical treatment of the properties of the isolated As antisite in GaAs is presented. The results are compared to recent works of Dabrowski and Scheffler and of Chadi and Chang, which suggested that the As antisite be identified with the EL2 defect in GaAs. A large supercell, an extensive plane-wave basis, and several Brillouin-zone sampling points are used to improve the accuracy of theoretical predictions. We find that the isolated antisite exhibits metastability, which is the most important property of the EL2 defect, but the energy barrier is lower from the experimental value by a factor of 2. Possible sources of the discrepancy are discussed.Keywords
This publication has 20 references indexed in Scilit:
- Arsenic antisite defectandEL2 in GaAsPhysical Review B, 1987
- Symmetry of theEL2defect in GaAsPhysical Review B, 1987
- Need for an acceptor level in the-model forEL2Physical Review B, 1987
- Electronic structure and binding energy of the-pair in GaAs: EL2 and the mobility of interstitial arsenicPhysical Review B, 1987
- Identification of a defect in a semiconductor:EL2 in GaAsPhysical Review B, 1986
- Bistability and Metastability of the Gallium Vacancy in GaAs: The Actuator of2?Physical Review Letters, 1985
- Identification of the 0.82-eV Electron Trap,in GaAs, as an Isolated Antisite Arsenic DefectPhysical Review Letters, 1985
- Intracenter transitions in the dominant deep level (EL2) in GaAsApplied Physics Letters, 1983
- Photoelectric memory effect in GaAsJournal of Applied Physics, 1982
- Direct evidence for the nonassignment to oxygen of the main electron trap in GaAsJournal of Applied Physics, 1979