High power Al-free 808 nm laser bars
- 23 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Strain effects on InGaP-InGaAsP-GaAsP tensile strained quantum-well lasersIEEE Photonics Technology Letters, 1995
- Optimized structure for InGaAsP/GaAs 808 nm high power lasersApplied Physics Letters, 1995