High power, low threshold, singlemode 630 nm laser diodes

10 September 1992

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 28 (19) , 1810-1811
https://doi.org/10.1049/el:19921154

Abstract

Output powers exceeding 45 mW under room temperature, continuous wave operation and threshold currents as low as 30 mA are demonstrated in singlemode AlGaInP visible laser diodes emitting at 636 nm. Singlemode operation is maintained at output powers exceeding 40 mW.

Keywords

SINGLEMODE
630 NM
LASER DIODES
VISIBLE LASERS
30 MA
45 MW
ALGAINP
ROOM TEMPERATURE
SEMICONDUCTORS
HIGH POWER
CONTINUOUS WAVE OPERATION
THRESHOLD CURRENTS

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