The GaAs P-N-P-N laser diode
- 1 July 1974
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 10 (7) , 567-569
- https://doi.org/10.1109/jqe.1974.1068200
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Electroluminescent shockley diodes of GaAs and GaAsl−x, PxJournal of Electronic Materials, 1973
- Physical basis for the negative resistance in double heterostructure injection lasersApplied Physics A, 1973
- Thin solution multiple layer epitaxyJournal of Crystal Growth, 1972
- Large-Optical-Cavity (AlGa) As–GaAs Heterojunction Laser Diode: Threshold and EfficiencyJournal of Applied Physics, 1972
- Multilayer GaAs injection laserIEEE Journal of Quantum Electronics, 1968
- A Light-Activated Semiconductor SwitchJournal of Applied Physics, 1967
- Graphical analysis of the I-V characteristics of generalized p-n-p-n devicesProceedings of the IEEE, 1967