Preparation of a-Si:H and a-SiGe:H I-Layers for Nip Solar Cells at High Deposition Rates Using a Very High Frequency Technique
- 1 January 1998
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- High-Rate Preparation of Amorphous-Silicon Solar Cells with MonosilaneJapanese Journal of Applied Physics, 1986
- Structural, electrical, and optical properties of a-:H and an inferred electronic band structurePhysical Review B, 1985