Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noise

Publisher Website
Google Scholar
Abstract
In very small electronic devices the alternate capture and emission of carriers at an individual defect site generates discrete switching in the device resistance—referred to as a random telegraph signal (RTS). The study of RTSs has provided a powerful means of investigating the capture and emission kinetics of single defects, has demonstrated the defect origins of low-frequency (1/ƒ) noise in these devices, and has provided new insight into the nature of defects at the Si/SiO2 interface.