A MESFET distributed amplifier with 2 GHz bandwidth

1 June 1969

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 57 (6) , 1195-1196
https://doi.org/10.1109/proc.1969.7188

Abstract

A lumped distributed amplifier is built in a hybrid technique with microwave Schottky-barrier field-effect transistors and tested. A not yet optimized structure has a flat frequency response up to about 2 GHz and negligible phase distortions; ps-puIses are amplified with negligible overshoot.

Keywords

MESFETS
DISTRIBUTED AMPLIFIERS
BANDWIDTH
MOSFETS
PULSE AMPLIFIERS
TESTING
FREQUENCY RESPONSE
PHASE DISTORTION
FEEDBACK
FREQUENCY MEASUREMENT

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