Atomic structure at the LaSi2−x/Si(100) interface
- 2 July 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (1) , 43-45
- https://doi.org/10.1063/1.104235
Abstract
Interfaces between Si(100) and LaSi2−x lattices formed by rapid thermal annealing at ∼900 °C for 10 s have been studied using high‐resolution transmission electron microscopy. The experimental results show that the C axis of the LaSi2−x unit cell points to the 〈332〉Si direction. A model suggesting the {100} planes of LaSi2−x grown on a {113}Si surface has been put forward to account for the observed tilting growth of LaSi2−x disilicide on the Si(100) surface.Keywords
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